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IAP200B120 PowerStack

200A / 1200V Full-Bridge IGBT Inverter

DOWNLOAD IAP200B120 DATASHEET

Features Include

• Multi-Function Power Assembly
• Compact Size –8.00” H X 17.60” W X 11.00” D
• DC Bus Voltages to 850VDC
• Snubber-less operation to 650VDC
• Switching frequencies to over 20kHz
• Protective circuitry with fail-safe opto-isolated fault annunciation, including:
• OverCurrent
• OverVoltage
• OverTemperature
• Short circuit
• P.S. UnderVoltage
• Opto-isolated or fiber-optic gate drive and fault signal output for electrical isolation and noise immunity
• Integrated cooling with temperature sensors and feedback
• Many options- SCR/Diode Front End, etc.
Configurable Power

The IAP200B120 PowerStack is a flexible, highly integrated IGBT based power assembly with a wide range of applications. These include inverters for renewable energy, energy storage, motor controls, switch mode power supplies (SMPS), UPS, welders, etc. The IAP200B120 PowerStack can be operated at frequencies to over 20kHz. The IAP200B120 PowerStack can be configured as a full bridge or three-phase bridge inverter mounted on an air-cooled or liquid-cooled heat sink. Configurations include options for (full, half or no control) converter input circuitry, inverter output circuitry, cooling and a wide variety of drivers and safety features for the converter front end and IGBT inverter output stage.

To operate at high switching frequencies, the IAP200B120 PowerStack utilizes a low inductance laminated bus structure, optically isolated or fiber optically coupled gate drive interfaces, isolated gate power supplies and a DC-link capacitor bank.

The IAP200B120 PowerStack provides built in protection features including: over voltage, under voltage lockout, over current, over temperature, short circuit and optional airflow or liquid flow indicators.

Flexibility is a key feature of the IAP200B120 PowerStack. Options include: a choice of converter front ends, rectifier, half or full SCR control, with or without SCR gate firing boards and soft-start circuitry. A choice of cooling methods, forced air or liquid is also available. Customer provided PWM is optically coupled or a fiber optic link can be provided to the IGBT interface. Current feedback is provided by Hall effect transducers.

The IAP200B120 PowerStack is rated to maximum input voltages up to 850 VDC, switching frequencies to over 20kHz, includes many safety features to protect the IGBTs and output circuitry and can be configured to meet your application.
IAP200B120 Integrated Advanced PowerStack
Absolute Maximum Ratings – TJ=25°C unless otherwise specified
General Symbol Value Units
IGBT Junction Temperature TJ -40 to +150 °C
Storage Temperature TSTG -40 to +125 °C
Voltage applied to DC terminals VCC 850 Volts
Isolation voltage, AC 1 minute, 60Hz sinusoidal VISO 2500 Volts
IGBT Inverter
Collector Current (TC=25°C) IC 200 Amperes
Peak Collector Current (TJ<150°C) ICM 400 Amperes
Emitter Current IE 200 Amperes
Peak Emitter Current IEM 400 Amperes
Maximum Collector Dissipation (TJ<150°C) PCD 1100 Watts
Gate Drive Board
Unregulated +24V Power Supply 30 Volts
Regulated +15V Power Supply 18 Volts
PWM Signal Input Voltage 15 Volts
Factory Settable from 3.3 to 15V
Fault Output Supply Voltage 30 Volts
Fault Output Current 50 mA
IGBT Inverter Electrical Characteristics, TJ=25°C unless otherwise specified
Parameter Symbol Test Conditions Min Typ Max Units
Collector Cutoff Current ICES VCE =VCES , VGE=0V - - 1 mA
Collector-Emitter Saturation Voltage VCE (sat) IC =200A, TJ =25°C - 1.75 2.15 Volts
IC =200A, TJ =125°C - 2.0 - Volts
Emitter-Collector Voltage VEC IE =200A - - 3.2 Volts
Inductive Load Switching Times td(on) VCC =600V

IC =200A

VGE =15V

RG =2.7?		 - - 200 ?s
tr - - 45 ?s
td(off) - - 500 ?s
tr - - 100 ?s
Diode Reverse Recovery Time Trr - - 200 ?s
Diode Reverse Recovery Charge Qrr - 20.0 - µC
DC Link Capacitance - 4950 - µF
Thermal and Mechanical Parameters
Parameter Symbol Test Conditions Min Typ Max Units
IGBT Thermal Resistance, Junction to Case R?(j-c) Per IGBT ½ module - - 0.135 °C/W
FWD Thermal Resistance, Junction to Case R?(j-c) Per FWD ½ module - - 0.20 °C/W
Heatsink Thermal Resistance R?(s-a) 1500 LFM airflow - .045 - °C/W
Mounting Torque, AC terminals - 75 90 In-lb
Mounting Torque, DC terminals - 130 150 In-lb
Mounting Torque, case mounting - 130 150 In-lb
Weight - 21 - lb
Gate Drive Board Electrical Characteristics
Parameter Min Typ Max Units
Unregulated +24V Power Supply 20 24 30 Volts
Regulated +15V Power Supply 14.4 15 18 Volts
PWM Input On Threshold 12 15 - Volts
PWM Inout Off Threshold - 0 2 Volts
Output Overcurrent Trip - 300 - Amperes
Overtemperature Trip 86 88 90 °C
Overvoltage Trip - 900 - Volts
DC Link Voltage Feedback See Figure Below Volts
Heatsink Temperature Feedback See Figure Below Volts
Output Current Feedback See Figure Below Volts



Performance Curves
Effective Output Current vs. Carrier Frequency (Typical)
Conditions Symbol Value Units
Ambient Temperature TA 40 °C
DC Bus Voltage VCC 600 Volts
Load Power Factor COS ? 0.8
IGBT Saturation Voltage VCE(sat) Typical @ TJ=125°C Volts
IGBT Switching Loss ESW Typical @ TJ=125°C mJ
Airflow - 1500 LFM
Switching Conditions Single-phase PWM, 60Hz sinusoidal output
Interface
Pin # Signal Name Description
1 Shield Connected to circuit ground
2 PWM A- 0-15V signal controlling the duty cycle of A- IGBT
3 Phase A Error1 Open collector output, external pull-up resistor required.
LOW=No Error; Floating=Phase A overcurrent or short circuit
4 PWM A+ 0-15V signal controlling the duty cycle of A+ IGBT
5 PWM B- 0-15V signal controlling the duty cycle of B- IGBT
6 Phase B Error1 Open collector output, external pull-up resistor required.
LOW=No Error; Floating=Phase A overcurrent or short circuit
7 PWM B+ 0-15V signal controlling the duty cycle of B+ IGBT
8 Not Used
9 Not Used
10 Not Used
11 OverTemp1 Open collector output, external pull-up resistor required.
LOW=No Error; Floating=Heatsink overtemp
12 Not Connected
13 DC Link Voltage Analog voltage representation of DC link voltage
14 24VDC Input Power2 20-30VDC input voltage range
15 24VDC Input Power2 20-30VDC input voltage range
16 15VDC Input Power2 14.4-18VDC input voltage range
17 15VDC Input Power2 14.4-18VDC input voltage range
18 GND Ground reference for 15 and 24VDC inputs
19 GND Ground reference for 15 and 24VDC inputs
20 Heatsink Temperature Analog voltage representation of heatsink temperature
21 GND3 Tied to pins 18 and 19
22 IOUT Phase A Analog voltage representation of phase A output current
23 GND3 Tied to pins 18 and 19
24 IOUT Phase B Analog voltage representation of phase B output current
25 Not Used
26 Not Used
NOTES:
1. Open collectors can be pulled up to 30VDC Max and sink 50mA continuous.
2. DO NOT connect a 15VDC and 24VDC source to the unit at the same time. Use one or the other.
3. GND signals to be used for analog feedback signals, i.e. twisted pair with IOUT Phase A.
Gate Drive Interface Connector
Description Symbol Type Manufacturer
Gate Drive Interface Header J1 0.100” x 0.100” latching header, 26 pin 3M #3429-6002 or equivalent
Recommending Mating Socket - 0.100” x 0.100” IDC socket, 26 pin 3M #3399-7600 or equivalent
Recommended Strain Relief - Plastic strain relief 3M #3448-3026 or equivalent

Mechanical Information